<^/ v . i, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. n-channel mosfet transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRF740 description ? drain current-id= 10a@ tc=25c ? drain source voltage- : vdss= 400v(min) ? static drain-source on-resistance : rds(on) = 0.55 q (max) ? fast switching speed applications ? designed especially for high voltage,high speed applications, such as off-line switching power supplies , ups.ac and dc motor controls,relay and solenoid drivers. absolute maximum ratings(ta=25'c) symbol vdss vgs id plot tj tstg arameter drain-source voltage (vos-0) gate-source voltage drain current-continuous? tc=25c total dissipation@tc=25'c max. operating junction temperature storage temperature range value 400 20 10 125 150 -65-150 unit v v a w "c c thermal characteristics symbol rth j-c parameter thermal resistance.junction to case max 1.0 unit c/w * -> ? ? \ 2 i ?xoj pin ts 0(2) o sj) o s(j) lgate 2. drain 3. source to-220c package t. mo u i r i * ! a ' i ' !r k ? ? * b h -v~jl- k-ft! ,-\s \< r *m* d rh0* 3 ?- 1 i 1 c 1 1 i dtm a b c d f g h ^ k l q r s u v -* f l -?? mm msn 15.70 0.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 *s \o ^ f r|-* nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
n-channel mosfet transistor IRF740 electrical characteristics (tc=25c) symbol v(br)dss vgsith) rds(on) loss loss vsd parameter drain-source breakdown voltage gate threshold voltage drain-source on-stage resistance gate source leakage current zero gate voltage drain current diode forward voltage conditions vgs=0; id= 0.25ma vds= vgs; lo= 0.25ma vgs=10v;ld=5a vgs= 20v;vds=0 vds= 400v; vgs= 0 lf=10a;vgs=0 win 400 2 max 4 0.55 500 250 2.2 unit v v n na ua v
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